2SA1280 transistor equivalent, power transistor.
*Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
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*Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for high current switching applications
AB.
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